EDP: tn8: increase EDP margins
Timo Alho [Thu, 5 Dec 2013 11:04:53 +0000 (13:04 +0200)]
This patch increases the EDP margins for TN8
1) Increase VSYSMIN to 3.0V
2) Increase ESR values for low state-of-charge (*)

(*) ESR for low state-of-charge is now artificially high - compared to
measured values. This is a WAR to address frequent crashes at low
battery.

Bug 1412957
Bug 1386169
Bug 1419179
Bug 1418200

Change-Id: I06bc39510cca6a077837f2e2129cf205691d5fbf
Signed-off-by: Timo Alho <talho@nvidia.com>
Reviewed-on: http://git-master/r/338700
Reviewed-by: Automatic_Commit_Validation_User
Reviewed-by: Steve Rogers <srogers@nvidia.com>
Reviewed-by: Juha Tukkinen <jtukkinen@nvidia.com>
Tested-by: Juha Tukkinen <jtukkinen@nvidia.com>

arch/arm/mach-tegra/board-tn8-sysedp.c

index 26acdf6..56e0aab 100644 (file)
@@ -100,10 +100,11 @@ static int rbat_temp_axis[] = { 60, 40, 25, 0, -20 };
 static int rbat_capacity_axis[] = { 100, 13, 0 };
 #else
 static int rbat_data[] = {  70000,   /* 100% */
-                           70000,   /*  13% */
-                           90000 }; /*   0% */
+                           70000,   /*  25% */
+                          110000,   /*  10% */
+                          130000 }; /*   0% */
 static int rbat_temp_axis[] = { 25 };
-static int rbat_capacity_axis[] = { 100, 13, 0 };
+static int rbat_capacity_axis[] = { 100, 25, 10, 0 };
 #endif
 struct sysedp_batmon_rbat_lut tn8_rbat_lut = {
        .temp_axis = rbat_temp_axis,
@@ -117,7 +118,7 @@ struct sysedp_batmon_rbat_lut tn8_rbat_lut = {
 static struct sysedp_batmon_calc_platform_data tn8_batmon_pdata = {
        .power_supply = "battery",
        .r_const = 60000,
-       .vsys_min = 2900000,
+       .vsys_min = 3000000,
        .ibat_lut = tn8_ibat_lut,
        .rbat_lut = &tn8_rbat_lut,
 };